English
Language : 

STN1A60S Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Logic Level Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage: 600V
■ R.M.S On-State Current(IT(RMS)=1A
■ Low on-state voltage: VTM=1.2(typ.)@ ITM
■ Low reverse and forward blocking current:
IDRM=500uA@TC=125℃
■ Low holding current: IH=4mA (typ.)
■ High Commutation dV/dt.
STN1A60S
Logic Level
Bi-Directional Triode Thyristor
General Description
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
Symbol
Parameter
Value Units
VDRM
T(RMS)
ITSM
I2t
Peak Repetitive Forward Blocking Voltage(gate open)
(Note 1)
600
V
Forward Current RMS (All Conduction Angles, TL=50℃)
Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz)
1
A
9.1/10
A
Circuit Fusing Considerations (tp= 10 ms)
0.41
A2s
PGM
PG(AV)
dI/dt
IFGM
Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us)
Average Gate Power — Forward, (Over any 20ms period)
Critical rate of rise of on-state current
ITM = 1.5A; IG = 200mA; dIG/dt = 200mA/µs
TJ=125℃
Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS)
5
W
0.1
W
50
A/μs
0.5
A
VRGM
Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS)
6
V
TJ,
Junction Temperature
-40~125
℃
Tstg
Storage Temperature
-40~150
℃
mass
2
g
Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may
switch to the on-state. The rate of rise of current should not exceed 3A/us.
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
-
-
60
-
-
120
Units
℃/W
℃/W
Rev. B Nov.2008
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
T01-3