STF12A60 Datasheet, PDF (1/5 Pages) SemiWell Semiconductor – Bi-Directional Triode Thyristor

Features
■ Repetitive Peak off-State Voltage:600
■R.M.S On-State Current(I_T(RMS)=12A
■ Isolation Voltage ( VISO = 1500V AC )
■ High Commutation dV/dt.
STF12A60
Bi-Directional Triode Thyristor
General Description
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
By using an internal ceramic pad, the TO220F series provides
voltage insulated tab (rated at 2500V RMS) complying with UL
standards (file ref.:E347423)
A1
A2
G
TO220F
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
Symbol
V_DRM
I_T(RMS)
I_TSM
I²t
P_GM
P_G(AV)
I_FGM
V_RGM
T_J,
T_stg
Parameter
Peak Repetitive Forward Blocking Voltage(gate open) (Note 1)
Forward Current RMS (All Conduction Angles, Tc=58℃)
Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 50/60 Hz)
Circuit Fusing Considerations (t p= 10 ms)
Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us)
Average Gate Power — Forward, (Over any 20ms period)
Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS)
Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS)
Junction Temperature
Storage Temperature
Value
600
12
119/130
71
5
0.5
2
10
-40~125
-40~150
Units
V
A
A
A²s
W
W
A
V
℃
℃
Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC
may switch to the on-state. The rate of rise of current should not exceed 3A/us.
Thermal Characteristics
Symbol
Parameter
R_QJC
R_QJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
-
-
3.3
-
-
120
Units
℃/W
℃/W
Rev. B Nov.2008
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