SFP70N06 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – N-Channel MOSFET

Features
� 70A,60V, RDS(on)(Max0.014Ω)@VGS=10V
� Ultra-low Gate charge(Typical 70nC)
� Low Crss (Typical 160pF)
� Improved dv/dt capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(175℃)
SFP70N06
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Semiwell's advanced
planar stripe,DMOS technology.This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics,DC-DC Converters and power
management in portable and,battery operated products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
Maximum Lead Temperature for soldering purpose,
TL
1/8 form Case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note3)
Value
60
70
51
280
±25
800
7.0
158
1.05
-55~175
300
Units
V
A
A
A
V
mJ
V/ ns
W
W/℃
℃
℃
Value
Min Typ Max
-
-
0.95
-
0.5
-
-
-
62.5
Units
℃/W
℃/W
℃/W
Rev.A Oct.2010
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