SFP3710G Datasheet, PDF (1/7 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon N-Channel MOSFET

Features
� 59A,100V,RDS(on)(Max 18mΩ)@VGS=10V
� Ultra-low Gate Charge(Typical 1180nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(175℃)
SFP3710G
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,DMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for switching regulators, switching convertors, motor and
relay drivers , and drivers for high power bipolar switching
transistor demanding high speed and low gate drive power.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL
Maximum lead Temperature for soldering purposes
(Note1)
(Note2)
(Note1)
(Note3)
Value
100
59
42
240
±20
170
7.4
5.8
136
1.3
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
-
-
0.92
℃/W
-
0.5
-
℃/W
-
-
62.5
℃/W
Rev.A Aug.2010
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