SFP13N50_14 Datasheet, PDF (1/8 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon N-Channel MOSFET

SFP13N50 Product Description
Silicon N-Channel MOSFET
Features
� 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V
� Ultra-low Gate charge(Typical 37nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,DMOS technology.This latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics .This devices is specially wellsuited for high efficiency
switch model power supplies, power factor correction and half bridge and
full bridge resonant topology line a electronic lamp ballast.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
（note 1）
(Note1)
(Note3)
Value
500
13
8
52
±30
845
13
5
3.5
195
1.56
-55~150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ ns
W
W/℃
℃
℃
Value
Units
Min
Typ
Max
-
-
0.64
℃/W
-
-
62.5
℃/W
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Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEM I M ICROELECTRONICS
WT-F060-Rev.A1 Jan.2014
WINSEM I M ICROELECTRONICS
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