SFP12N65 Datasheet, PDF (1/7 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon N-Channel MOSFET

SFP12N65
Silicon N-Channel MOSFET
Features
■ 12A,650V,RDS(on)(Max0.78Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 30nC)
■ Fast Switching Capability
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, VDMOS technology. This latest technology has
been especially designed to minimize on-state resistance, have a
high rugged avalanche characteristics. This devices is specially
well suited for AC-DC switching power supplies, DC-DC power
converters, high voltage H-bridge motor drive PMW
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TJ, Tstg
TL
Drain Source Voltage
Parameter
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Channel Temperature
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
650
12
±30
990
22
4.5
178
1.43
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
R_QJC
R_QCS
R_QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
-
-
0.70
-
-
-
-
-
62.5
Rev, A Nov.2008
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Units
℃
℃^/
W_℃/
W/
W