SFF740 Datasheet, PDF (1/7 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon N-Channel MOSFET

Features
■ 10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 60nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
SFF740
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,VDMOS technology. This latest technology has beenespecially
designed to minimize on -state resistance,have a highrugged
avalanche characteristics. This devices is specially wellsuited for high
efficiency switch model power supplies, power factor correction and
half bridge and full bridge resonant topology line a electronic lamp
ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL
Maximum lead Temperature for soldering purposes
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note1)
(Note3)
Value
400
10*
6.3*
40*
±30
450
13
4
44
0.35
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Value
Units
Min Typ Max
-
-
2.86
℃/W
-
-
62.5
℃/W
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.