SBP3306 Datasheet, PDF (1/6 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

SBP3306
High Voltage Fast-Switching NPN Power Transistor
Features
■ Very high switching speed
■ High Voltage Capability
■ Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High
speed switching characteristics required such as
lighting system, switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
TSTG
Collect-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Total Dissipation at Tc=25℃
Operation Junction Temperature
Storage Temperature
Test Conditions
VBE=0
IB=0
IC=0
(Note)
Value
950
400
12
4
8
70
150
-65~150
Units
V
V
V
A
A
W
℃
℃
Thermal Characteristics
Symbol
Parameter
RÓ¨JC
RÓ¨JA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
1.8
62.5
Units
℃/W
℃/W
Rev.A02 Jun.2011
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