SBP1710-R Datasheet, PDF (1/6 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

SBP1710-R
High Voltage Fast-Switching NPN Power Transistor
Features
■ Very high switching speed
■ High Voltage Capability
■ Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting
system, switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
TSTG
Collect-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Total Dissipation at Tc=25℃
Operation Junction Temperature
Storage Temperature
Test Conditions
VBE=0
IB=0
IC=0
(Note)
Value
900
500
7
7
14
45
150
-55~150
Units
V
V
V
A
A
W
℃
℃
Rev.A01 Jun.2011
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
T111-3