SBP13007-O Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

SBP13007-O
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed
◆ High Voltage Capability
◆ Wide Reverse Bias SOA
General Description
This device is designed for high voltage, High speed
switching characteristics required such as lighting
system ,switching mode power supply.
B
C
E
TO220
Absolute Maximum Ratings
Symbol
Parameter
V_CES
Collector-Emitter Voltage
V_CEO
V_EBO
I_C
I_CP
I_B
I_BM
P_C
T_J
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25℃
Total Dissipation at Ta = 25℃
Operation Junction Temperature
T_STG
Storage Temperature
Tc: Case temperature (good cooling)
Ta:Ambient temperature (without heat sink)
Test Conditions
V_BE = 0
I_B = 0
I_C = 0
t_P = 5ms
Thermal Characteristics
Symbol
Parameter
R_θJc
Thermal Resistance Junction to Case
R_θJA
Thermal Resistance Junction to Ambient
Value
700
400
9.0
8.0
16
4.0
8.0
80
2.05
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
℃
℃
Value
1.56
62.5
Units
℃/W
℃/W
Jan 2008. Rev. 0
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
T01-3