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SBP13005-O Datasheet, PDF (1/6 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-SwitchingNPN Power Transistor
SBP13005-O
High Voltage Fast-Switching NPN Power Transistor
Features
■ Very High Switching Speed
■ High Voltage Capability
■ Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
TO-220HW
Absolute Maximum Ratings
Symbol
Paramete
VCES
Collector-Emitter Vroltage
VCEO
VEBO
IC
ICP
IB
IBM
PC
TJ
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc* = 25℃
Total Dissipation at Ta* = 25℃
Operation Junction Temperature
TSTG
Storage Temperature
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Test Conditions
VBE = 0
IB = 0
IC = 0
tP = 5ms
Value
700
400
9.0
4.0
8.0
2.0
4.0
75
2.0
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
℃
℃
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction to Ambient
Value
1.67
62.5
Units
℃/W
℃/W
Ordering Information
Order codes
Package
SBP13005-O
TO220C
SBP13005-O-HW
TO220HW
Marking
P13005-O
P13005-O
Halogen Free
NO
NO
Packaging
Tube
Tube
Rev.B Mar.2012
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