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SBP13003H Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast -Switching NPN Power Transistor
SBP13003H
High Voltage Fast -Switching NPN Power Transistor
Features
� Very High Switching Speed
� High Voltage Capability
� Wide Reverse Bias SOA
General Description
This Device is designed for high voltage , High speed
Switching characteristics required such as lighting
system, switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
ICP
Collector pulse Current
IB
Base Current
IBM
Base Peak Current
PC
Total Dissipation at Tc=25℃
TJ
Operation Junction temperature
TSTG
Storage Temperature
Tc:Case temperature(good cooling)
Test Conditions
VBE=0
IB=0
IC=0
tP=5ms
Value
900
530
9.0
1.5
3.0
0.75
1.5
30
-40~150
-40~150
Units
V
V
V
A
A
A
A
W
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJA
Thermal Resistance Junction to Ambient
value
13.6
Units
℃/W
Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.