SBN13002D Datasheet, PDF (1/4 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – HighVoltageFast-SwitchingNPNPowerTransistor

SBN13002D
HighVoltageFast-SwitchingNPNPowerTransistor
Features
■ Very High Switching Speed
■ High Voltage Capability
■ Wide Reverse Bias SOA
■ Built -in freewheeling diode
symbol
1.Base
2.Collector
3.Emitter
General Description
This Device is designed for high voltage, high speed
switching characteristics required such as lighting
system, switching mode power supple.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCEO
Collector -Emitter Voltage
VEBO
Emitter -Base Voltage
IC
Collector Current
ICP
Collector pulse Current
IB
Base Current
IBM
Base Peak Current
PC
Total Dissipation at Tc=25℃
TJ
Operation Junction Temperature
TSTG
Storage Temperature
Test conditions
VBE=0
IB=0
IC=0
tP=5ms
Value
600
400
9.0
1.25
2.5
-
-
12
-40~150
-40~150
Units
V
V
V
A
A
A
A
W
℃
℃
Rev.A Sep.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.