SBN13001 Datasheet, PDF (1/5 Pages) SemiWell Semiconductor – High Voltage Fast-Switching NPN Power Transistor

SBN13001
High Voltage Fast-Switching NPN Power Transistor
Features
� Very High Switching Speed
� High Voltage Capability
� Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting
system, switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collect-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
ICP
Collector pulse Current
IB
Base Current
IBM
Base Peak Current
Total Dissipation at Tc*=25℃
PC
Total Dissipation at Ta*=25℃
TJ
Operation Junction Temperature
TSTG
Storage Temperature
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Test Conditions
VBE=0
IB=0
IC=0
tP=5ms
Value
600
400
9.0
0.5
1.0
-
-
8
0.6
-40~150
-40~150
Units
V
V
V
A
A
A
A
W
℃
℃
Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.