MCR100-8H Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon Controlled Rectifiers

MCR100-8H
Sensitive Gate
Silicon Controlled Rectifiers
Features
■ High repetitive peak off-state voltage VDRM/VRRM=800V
■ Sensitive gate trigger current: IGT=200uA max.
■ Low on-state voltage: VTM=1.4(typ.)@ ITM
■ Low reverse and forward blocking current:
IDRM/IPRM=100uA@TC=125℃
■ Low holding current: IH=5mA maximum
General Description
Sensitive triggering SCR is suitable for the application
where gate current limited such as microcontrollers, logic
integrated circuits, small motor control, gate driver for large
SCR, sensing and detecting circuits.
General purpose switching and phase control applications
K
G
A
TO-92
Absolute Maximum Ratings (Tj=25℃ unless otherwise specified)
Symbol
Parameter
VDRM/VRRM
IT(RMS)
IT(AV)
Repetitive peak off-state voltage
RMS on-state current (180^o conduction angles)
Average on-state current (80^o conduction angles )
ITSM
Non repetitive surge peak on-state current
I²t
PGM
PG(AV)
IFGM
VRGM
TJ,
Tstg
I²t Value for fusing
Peak gate power
Average gate power dissipation
Peak gate current
Peak gate voltage
Junction temperature
Storage temperature
Note(1)
TI=85℃
TI=85℃
tp = 8.3 ms
tp = 10 ms
tp = 8.3 ms
TJ=25℃
TA=25℃
TA=25℃
Value
800
0.8
0.5
9
8
0.43
0.1
0.01
1
5
-40~125
-40~150
Units
V
A
A
A
A²s
W
W
A
V
℃
℃
Note1: Although not recommended, off-state voltages up to 900 V may be applied without damage, but the thyristor may
switch to the on-state.The rate of rise of current should not exceed 15 A/µs.
Thermal Characteristics
Symbol
RQJC
RQJA
Parameter
Thermal resistance, Junction-to-Case
Thermal resistance, Junction-to-Ambient
Value
Min Typ Max
-
-
75
-
-
200
Units
℃/W
℃/W
Rev. A1.1 Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
T12-2