MCR100-8 Datasheet, PDF (1/6 Pages) SemiWell Semiconductor – Sensitive Gate Silicon Controlled Rectifiers

MCR100-8
Sensitive Gate
Silicon Controlled Rectifiers
Features
■ Sensitive gate trigger current: IGT=200uA maximum
■ Low on-state voltage: VTM=1.2(typ.)@ ITM
■ Low reverse and forward blocking current:
IDRM/IPRM=100uA@TC=125℃
■ Low holding current: IH=5mA maximum
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as microcontrollers, logic integrated
circuits, small motor control, gate driver for large SCR, sensing
and detecting circuits.
General purpose switching and phase control applications
Absolute Maximum Ratings (Tj=25℃ unless otherwise specified)
Symbol
VDRM/VRRM
IT(RMS)
IT(AV)
ITSM
I²t
PGM
dI/dt
PG(AV)
IFGM
VRGM
TJ,
Tstg
Parameter
Repetitive peak off-state voltage
RMS on-state current (180^o conduction angles)
Average on-state current (80^o conduction angles )
Non repetitive surge peak on-state current
I²t Value for fusing
Peak gate power
Critical rate of rise of on-state current
ITM = 2A; IG = 10mA; dIG/dt = 100mA/µs
Average gate power dissipation
Peak gate current
Peak gate voltage
Junction temperature
Storage temperature
Note(1)
TI=85℃
TI=85℃
tp = 8.3 ms
tp = 10 ms
tp = 8.3 ms
TJ=125℃
TA=25℃
TA=25℃
TA=25℃
Value
600
0.8
0.5
9
8
0.41
0.1
50
0.01
1
5
-40~125
-40~150
Units
V
A
A
A
A²s
W
A/μs
W
A
V
℃
℃
Note1: Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may
switch to the on-state.The rate of rise of current should not exceed 15 A/µs.
Thermal Characteristics
Symbol
RQJC
RQJA
Parameter
Thermal resistance, Junction-to-Case
Thermal resistance, Junction-to-Ambient
Value
Min Typ Max
-
-
75
-
-
200
Units
℃/W
℃/W
Ordering Information
Order codes
Package
MCR100-8
TO126
MCR100-8-T
TO126
Marking
100-8
100-8
Halogen Free
NO
NO
Packaging
Tube
Reel
Rev. B2 Jun.2009
Copyright @ WinSemi Microeletronics Co., Ltd., All rights reserved.
T21-2