MCK100-6 Datasheet, PDF (1/5 Pages) SemiWell Semiconductor – Sensitive Gate Silicon Controlled Rectifiers

MCK100-6
Sensitive Gate
Silicon Controlled Rectifiers
Features
■ Sensitive gate trigger current: I_GT=200uA maximum
■ Low on-state voltage: V_TM=1.2(typ.)@ I_TM
■ Low reverse and forward blocking current:
I_DRM/I_PRM=100uA@TC=125℃
■ Low holding current: I_H=5mA maximum
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as microcontrollers, logic integrated
circuits, small motor control, gate driver for large SCR, sensing
and detecting circuits.
General purpose switching and phase control applications
Absolute Maximum Ratings (Tj=25℃ unless otherwise specified)
Symbol
Parameter
V_DRM/V_RRM
I_T(RMS)
I_T(AV)
Repetitive peak off-state voltage
RMS on-state current (180^o conduction angles)
Average on-state current (80^o conduction angles )
I_TSM
Non repetitive surge peak on-state current
I²t
P_GM
dI/dt
P_G(AV)
I_FGM
V_RGM
T_J,
T_stg
I²t Value for fusing
Peak gate power
Critical rate of rise of on-state current
I_TM = 2A; I_G = 10mA; dI_G/dt = 100mA/µs
Average gate power dissipation
Peak gate current
Peak gate voltage
Junction temperature
Storage temperature
Note(1)
TI=85℃
TI=85℃
tp = 8.3 ms
tp = 10 ms
tp = 8.3 ms
T_J=125℃
T_J=125℃
T_J=125℃
T_J=125℃
Value
400
0.8
0.5
9
8
0.41
2
Units
V
A
A
A
A²s
W
50
A/μs
0.1
W
1
A
5
V
-40~125
℃
-40~150
℃
Note1: Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may
switch to the on-state.The rate of rise of current should not exceed 15 A/µs.
Thermal Characteristics
Symbol
Parameter
R_QJC
R_QJA
Thermal resistance, Junction-to-Case
Thermal resistance, Junction-to-Ambient
Value
Min Typ Max
-
-
60
-
-
150
Units
℃/W
℃/W
Rev. A Jun.2011
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