K2611B Datasheet, PDF (1/7 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon N-Channel MOSFET

Features
■ 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V
■ Ultra-low Gate charge(Typical 72nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
K2611B
Silicon N-Channel MOSFET
General Description
This N-Channel enhancement mode power field effect transistors
are produced using Winsemi's proprietary, planar stripe ,DMOS
technology. This advanced technology has been especially tailored
to minimize on-state resistance , provide superior switching
performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ
Junction Temperature
Tstg
Storage Temperature
TL
Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note1)
(Note3)
Value
900
11
7
45.6
±30
1000
30
4.0
300
2.38
150
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
℃
Value
Min Typ Max
-
-
0.42
-
-
40
Units
℃/W
℃/W
Rev.A Nov.2011
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