SD103A Datasheet, PDF (4/4 Pages) Semtech Corporation – Silicon Schottky Barrier Diodes for general purpose applications

RoHS
SD103A-SD103C
Electrical Characteristics
WEJ ELECTRONIC CO.,LTD Tj=25
Parameter
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Test Conditions
I_F=20mA
I_F=200mA
V_R=30V
V_R=20V
V_R=10V
V_R=V_F=0, f=1MHz
I_F= I_R=200mA to 0.1mA I_R
Type
SD103A
SD103B
SD103C
Symbol Min
V_F
V_F
I_R
I_R
I_R
C_D
t_rr
Typ Max Unit
0.37 V
0.6 V
5
A
5
A
5
A
50
pF
10
ns
Characteristics (T_j=25 unless otherwise specified)
Forward voltage: VF(V)
Figure 1. Typical variation of forward current vs.
forward voltage for primary conduction
through the schottky barrier
Forward voltage: VF(V)
Figure 2. Typical high current forward conduction
curve tp=300ms, duty cycle=2%
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