R1200F Datasheet, PDF (2/2 Pages) Rectron Semiconductor – HIGH VOLTAGE FAST RECOVERY RECTIFIER (VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere)

RoHS
R1200F-R5000F
WEJ ELECTRONIC CO.,LTD FIG.1-TYPICALFORWARDCURRENT
DERATING CURVE
Single Phase
Half Wave 60Hz
500
Resistive or
Inductive Load 0.375"(9.5mm)
Lead Length
200
R1200F-R2000F
R2500F-R5000F
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE, ( ° C)
FIG.3-TYPICAL REVERSE
CHARACTERISTICS
10
1.0
0.1
Tj =25 ° C
0.01
0
40
80
120
PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
8.3ms Single Half Sine-Wave
(JEDEC Method) =TTj j max
20
10
1 Cycle
0
1
2
4 6 8 10
20
40 60
100
NUMBER OF CYCLES AT 60 Hz
FIG.4-TEST CIRCUIT DIAGRAM AND
REVERSE RECOVERY TIME CHARACTERISTIC
50
10
NONINDUCTIVE NONINDUCTIVE
+0.5A
(+)
25 Vdc
(approx.)
(-)
(-)
D.U.T.
PULSE
GENERATIOR
(NOTE 2)
1
(+)
OSCILLOSCOPE
NON
INDUCTIVE
(NOTE 1)
0
-0.25A
-1.0A
NOTES: 1.Rise Time =7ns max. Input Impedance=
1 megohm. 22pF
2.Rise time=10ns max. Source Impedance=
50 ohms
Trr
1cm
SET TIME BASE FOR
50/100ns/cm
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