MMDT5451 Datasheet, PDF (2/2 Pages) Diodes Incorporated – COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

RoHS
MMDT5451
TR1(PNP 5401) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO
Ic=-100µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=-10µA, IC=0
Collector cut-off current
ICBO
VCB=-120V, IE=0
Emitter cut-off current
IEBO
VEB=-3V, IC=0
VCE=-5V, IC=-1mA
DC current gain
hFE
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
WEJ ELECTRONIC Collector-emitter saturation voltage
Emitter-base saturation voltage
Transition frequency
Collector output capacitance
Noise Figure
VCE(sat)
VBE(sat)
fT
Cob
NF
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
VCE=-5V, IC=-0.2mA, f=1KHz
MIN TYP MAX UNIT
CO.,LTD -160
-150
-5
50
60
50
V
V
V
-50 nA
-50 nA
240
-0.2
V
-0.5
-1
V
100
MHz
6
pF
8
dB
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