MMBTA92LT1_15 Datasheet, PDF (2/2 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – PNP EPITAXIAL SILICON TRANSISTOR

RoHS
M M B TA 9 2 LT 1
Typical Characteristics
300
250
TJ=+25 C
200
150
25 C
100
55 C
50
0
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
WEJ
ELECTRONIC ^1.0
10
IC,COLLECTOR CURRENT (mA)
DC Current Gain
1.0
10
100
IC,COLLECTOR CURRENT (mA)
On Voltages
150
130
110
90
70
50
TJ=25 C
VCE=20V
30
f=20MHz
10
1
3 5 7 9 11 13 15 17 19 21
IC,COLLECTOR CURRENT (mA)
CO.,LTD VCE=10Vdc
100
VCE(sat)@ 25 C, ICIB= 10
VCE(sat)@125 C, ICIB= 10
VCE(sat)@-55 C, ICIB= 10
VBE(sat)@ 25 C, ICIB= 10
VBE(sat)@125 C, ICIB= 10
VBE(sat)@-55 C, ICIB= 10
VBE(sat)@ 25 C, VCE= 10V
VBE(sat)@125 C, VCE= 10V
VBE(sat)@-55 C, VCE= 10V
Current-Gain-- Bandwidth
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