MB2505 Datasheet, PDF (2/2 Pages) Rectron Semiconductor – SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 25 Amperes)

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MB2505-2510
FIG.1-DERATING CURVE FOR
FIG.2-MAXIMUM NON-REPETITIVE PEAK
OUTPUT RECTIFIED CURRENT
FORWARD SURGE CURRENT PER ELEMENT
30
WEJ ^{ELECTRONIC CO.,LTD HeatSinkMounting}
5"x 6"x 4.9" Thick
(12.8 x 15.2 x 12.4cm)
20
AL.Finned Plate
Single Phase
10
Half Wave 60Hz
Inductive or Resistive
Load
0
0
25
50
75
100
125
150
175
CASE TEMPERATURE, ( ° C)
FIG.3-TYPICAL FORWARD CHARACTERISTICS
PER BRIDGE ELEMENT
100
10
1.0
T_j =25 ° C
Pulse Width=300uS
1%Duty Cycle
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,(V)
FIG.5-TYPICAL JUNCTION CAPACITANCE
PER BRIDGE ELEMENT
1000
100
T =25 ° C
f=1MHz
V sig =50mV
10
0.1
1.0
10
100
300
8.3ms Single Half Sine-Wave
(JEDEC Method) =T Tj j max
200
100
1 Cycle
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
PER BRIDGE ELEMENT
100
T_j =100 ° C
10
1.0
T_j =25 ° C
0.1
0.01
0
20
40
60
80
100
120 140
PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
FIG.6-MAXIMUM POWER DISSIPATION
100
80
T_j =_j T_max
60
Capacitive
Load
40
Resistive
or
Inductive
20
Load
0
0
5 10 15 20 25 30 35
REVRESE VOLTAGE,(V)
AVERAGE OUTPUT CURRENT,
(A)
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