1SS226 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

RoHS
1SS226
Typical Characteristics .,LTD IF-VF
1
100m
O _10m
C _1m
TA=100 C
25 C
-25 C
100
IC ₁₀
N ⁰
0.2
0.4 0.6 0.8 1.0
1.2
FORWARD VOLTAGE VF(V)
IR - VR
10
1
100n
TA=100 C
75 C
50 C
10n
25 C
1n
0
20
40
60
80
REVERSE VOLTAGE VR(V)
TRO _{CT - VR}
C_f=1MHz
1.6
Ta=25 C
E _1.2
L _0.8
E _0.4
J0
0.3
1
3
10 30 100
WE ^{REVERSE VOLTAGE VR (V)}
50
Ta=25 C
30 _Fig.1
trr - IF
10
5
3
1
0.5
0.1
0.3
1
3
10
30 100
FORWARD CURRENT IF(mA)
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