US3A Datasheet, PDF (1/2 Pages) Shanghai Sunrise Electronics – SURFACE MOUNT ULTRA FAST SWITCHING RECTIFIER

RoHS
US3A-US3M
High Efficiency Recovery rectifiers
Major Ratings and Characteristics
I_F(AV)
3.0A
V_RRM
50 V to 1000 V
I_FSM
100 A
t_rr
50nS,75ns
V_F
1.0V,1.3V,1.7V
T_j max.
150 °C
Features
● Low profile package
● Ideal for automated placement
● Glass passivated chip junction
● Ultrafast reverse recovery time
● Low switching losses, high efficiency
● High forward surge capability
● High temperatrue soldering：
260℃/10 seconds at terminals
● Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
Mechanical Date
● Case: JEDEC DO-214ABolded plastic
body over passivated chip
● Terminals: Solder plated, solderable per
J-STD-002B and JESD22-B102D
● Polarity: Laser band denotes cathode end
Maximum Ratings & Thermal Characteristics & Electrical Characteristics
(T_A = 25 °C unless otherwise noted)
Symbol ^{US3A US3B US3D US3G US3J US3K US3M} UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V_RRM
50
V_RMS
35
Maximum DC blocking voltage
V_DC
50
Maximum average forward rectified current
I_F(AV)
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
I_FSM
Maximum instantaneous forward voltage at 3.0A
V_F
Maximum DC reverse current
at Rated DC blocking voltage
T_A = 25 ℃
T_A = 100℃
I_R
Maximum reverse recovery time
at I_F = 0.5 A , I_R = 1.0 A , I_rr = 0.25 A
t_rr
Typical junction capacitance at 4.0 V ,1MHz
Thermal resistance from junction to lead
Operating junction and storage temperature range
C_J
R_θJL
T_J, T_STG
100 200 400 600
70 140 280 420
100 200 400 600
3
100
1.0
1.3
10.0
50
50
15
85
–55 to +150
800 1000 V
560 700 V
800 1000 V
A
A
1.7
V
μA
75
nS
pF
℃/ W
℃
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