UMZ1N Datasheet, PDF (1/1 Pages) Rohm – General purpose transistor (dual transistors)

RoHS
UMZ1N
UMZ1N Multi-Chip TRANSISTOR (NPN/PNP)
SOT-363 _FEATURES
Power dissipation
P_CM:
150 mW (Tamb=25℃)
D _{Collector current}
T _ICM:
150/-150 mA
Collector-base voltage
.,L ^V(BR)CBO:
60/-60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
O _{TR1(NPN) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
C _Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=50µA, IE=0
60
V
IC ^{Collector-emitter breakdown voltage}
V(BR)CEO
Ic=1mA, IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50µA, IC=0
7
V
N _{Collector cut-off current}
ICBO
VCB=60V, IE=0
0.1 µA
O _{Emitter cut-off current}
IEBO
VEB=7V, IC=0
0.1 µA
DC current gain
R _{Collector-emitter saturation voltage}
T _{Transition frequency}
hFE(1)
VCE(sat)
fT
VCE=6V, IC=1mA
IC=50mA, IB=5mA
VCE=12V, IC=2mA, f=100MHz
120
560
0.4 V
180
MHz
C _{Collector output capacitance}
Cob
VCB=12V, IE=0, f=1MHz
2
3.5
E _{TR2(PNP) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
Symbol
Test conditions
MIN TYP MAX
pF
UNIT
L _{Collector-base breakdown voltage}
V(BR)CBO
Ic=-50µA, IE=0
-60
V
E _{Collector-emitter breakdown voltage}
V(BR)CEO
Ic=-1mA, IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50µA, IC=0
-6
V
J _{Collector cut-off current}
ICBO
VCB=-60V, IE=0
-0.1 µA
E_{Emitter cut-off current}
IEBO
VEB=-6V, IC=0
-0.1 µA
WDC current gain
hFE(1)
VCE=-6V, IC=-1mA
120
560
Collector-emitter saturation voltage
VCE(sat)
IC=-50mA, IB=-5mA
-0.5 V
Transition frequency
fT
VCE=-12V, IC=2mA, f=100MHz
140
MHz
Collector output capacitance
Cob
VCB=-12V, IE=0, f=1MHz
4
5
pF
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]