TPT5610 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP)

RoHS
TPT5610
TPT5610 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
1 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-1 A
Collector-base voltage
O _V(BR)CBO:
-25 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter voltage}
Transition frequency
E _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=-10µA, IE=0
Ic=-1mA, IB=0
IE=-10µA, IC=0
VCB=-20V, IE=0
VEB=-5V, IC=0
VCE=-2V, IC=-500mA
IC=-800mA, IB=-80mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-500mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-25
V
-20
V
-5
V
-1
µA
-1
µA
60
240
-0.5 V
-1
V
350
MHz
38
pF
WEJ ^{CLASSIFICATION OF h}FE
Rank
A
B
C
Range
60-120
85-170
120-240
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]