SB441Q-40 Datasheet, PDF (1/3 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – Schottky Barrier Diode

RoHS
SB441Q-40
Schottky Barrier Diode _{TD Features}
.,L ^{1. High reliability}
2. Low reverse current and low forward voltage
O _Applications
Low current rectification and high speed switching
C _Construction
IC _{Silicon epitaxial planar}
N _{Absolute Maximum Ratings}
O T_a=25
Parameter
R _{Peak reverse voltage}
DC reverse voltage
T _{Mean rectifying current}
Peak forward surge current
C _{Junction temperature}
Storage temperature
Symbol
Limits
Unit
V_RM
40
V
V_R
40
V
I_O
0.1
A
I_FSM
1
A
Tj
125
T_stg
-40 +125
LE _{Electrical Characteristics}
E _Ta=25
Parameter
Symbol
Conditions
Min
Type
Max
Unit
J _{Forward voltage}
V_F1 I_F=10mA
-
0.28
0.34
V
Forward voltage
V_F2 I_F=100mA
-
0.45
0.55
V
E_{Reverse current}
I_R
V_R=40V
-
9.0
100
A
W^{Capacitance between terminals}
C_T V_R=10V, f=1MHz
-
6.0
-
pF
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