SA940 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – TRANSISTOR (PNP)

RoHS
2SA940
2SA940 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _{PCM : 1.5 W (Tamb=25℃)}
.,L ^{Collector current}
I_CM : -1.5 A
Collector-base voltage
O _{V(BR)CBO : -150 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
NIC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
O Parameter
Collector-base breakdown voltage
R _{Collector-emitter breakdown voltage}
T _{Emitter-base breakdown voltage}
C _{Collector cut-off current}
E _{Emitter cut-off current}
DC current gain
L _{Collector-emitter saturation voltage}
E _{Base-emitter voltage}
J _{Transition frequency}
WE^{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=-100µA, IE=0
Ic=-1mA, IB=0
IE=-100µA, IC=0
VCB=-120V, IE=0
VEB=-5V, IC=0
VCE=-10V, IC=-500mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-500mA
VCE=-10V, IC=-500mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-150
V
-150
V
-5
V
-10 µA
-10 µA
40
140
-1.5 V
-0.65
-0.85 V
4
MHz
55
pF
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