S9016 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

RoHS
S9016
S9016 TRANSISTOR (NPN)
TD FEATURES
Power dissipation
.,L P_CM:
0.3 W (Tamb=25℃)
Collector current
O _ICM:
0.025 A
Collector-base voltage
C _V(BR)CBO:
30 V
Operating and storage junction temperature range
IC ^{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
N _Parameter
O _{Collector-base breakdown voltage}
R _{Collector-emitter breakdown voltage}
T _{Emitter-base breakdown voltage}
Collector cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= 100µA, IE=0
Ic= o.1mA, IB=0
IE= 100µA, IC=0
VCB= 30V, IE=0
MIN
TYP
30
20
5
C _{Emitter cut-off current}
IEBO
VEB= 3V, IC=0
E _{DC current gain}
hFE(1)
VCE=5V, IC= 1mA
28
L _{Collector-emitter saturation voltage}
VCE(sat)
IC= 10mA, IB= 1mA
MAX
0.1
0.1
270
0.3
UNIT
V
V
V
µA
µA
V
E _{Transition frequency}
fT
VCE= 5V, IC= 1mA
f =100MHz
300
MHz
WEJ ^{CLASSIFICATION OF hFE(1)}
Rank
D
E
F
G
H
I
J
Range
28-45
39-60
54-80
72-108
97-146
132-198 180-270
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]