S9015 Datasheet, PDF (1/1 Pages) Weitron Technology – PNP General Purpose Transistors

RoHS
S9015
S9015 _{D FEATURES}
TRANSISTOR (PNP)
4.45
5.21
2.92
MIN
4.32
5.33
T _{Power dissipation}
.,L ^PCM:
0.45 W (Tamb=25℃)
Collector current
I_CM:
-0.1 A
O _{Collector-base voltage}
V_(BR)CBO:
-50 V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
3.43
MIN
2.41
2.67
3.18
4.19 ^2.03
2.67
2.03
2.67
1.14
1.40
TO-92
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Emitter cut-off current}
E _{DC current gain}
L _{Collector-emitter saturation voltage}
Base-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
Test conditions
Ic= -100µA, IE=0
Ic= -1mA, IB=0
IE=-100µA, IC=0
VCB=-50V, IE=0
VEB= -5V, IC=0
VCE=-5V, IC= -1mA
IC=-100mA, IB= -10mA
IC=-100mA, IB=-10mA
MIN
-50
-45
-5
60
TYP
MAX UNIT
V
V
V
-0.05 µA
-0.05 µA
1000
-0.3
V
-1
V
J ^E Transition frequency
fT
VCE=-5V, IC= -10mA
150
f=30MHz
MHz
E_{CLASSIFICATION OF hFE(1)}
W^Rank
A
B
C
D
Range
60-150
100-300
200-600
400-1000
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