S9014 Datasheet, PDF (1/2 Pages) Weitron Technology – NPN General Purpose Transistors

RoHS
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG_SY₉C₀O₁.,₄LTD
TO-92 Plastic-Encapsulate Transistors
S9014 TRANSISTOR (NPN)
D _FEATURES
z High total power dissipation.(P_C=0.45W)
T _{z High hFE and good linearity}
z Complementary to S9015
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
.,L _{MAXIMUM RATINGS (TA=25℃ unless otherwise noted)}
O _Symbol
V_CBO
C _VCEO
V_EBO
I_C
IC _PC
T_J
N _Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
45
5
0.1
0.45
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
O _Parameter
R _{Collector-base breakdown voltage}
T _{Collector-emitter breakdown voltage}
C _{Emitter-base breakdown voltage}
Collector cut-off current
E _{Collector cut-off current}
L _{Emitter cut-off current}
E _{DC current gain}
Collector-emitter saturation voltage
J _{Base-emitter saturation voltage}
WE^{Transition frequency}
Symbol
Test conditions
V_(BR)CBO I_C=100μA, I_E=0
V_(BR)CEO I_C= 1mA, I_B=0
V_(BR)EBO I_E=100μA, I_C=0
I_CBO
V_CB=50V, I_E=0
I_CEO
V_CE=35V, I_B=0
I_EBO
V_EB= 5V, I_C=0
h_FE
V_CE=5V, I_C= 1mA
V_CE(sat) I_C=100mA, I_B= 5mA
V_BE(sat)
f_T
I_C=100mA, I_B= 5mA
V_CE=5V, I_C= 10mA
f=30MHz
MIN
50
45
5
60
150
123
TYP
MAX UNIT
V
V
V
0.1
μA
0.1
μA
0.1
μA
1000
0.3
V
1
V
MHz
CLASSIFICATION OF h_FE(1)
Rank
A
B
C
D
Range
60-150
100-300
200-600
400-1000
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