S9013 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – PLASTIC ENCAPSULATE TRANSISTORS

RoHS
S9013
S9013 TRANSISTOR (NPN)
D FEATURE
Power dissipation
T _PCM:
0.625 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
0.5 A
Collector-base voltage
O _V(BR)CBO:
40 V
Operating and storage junction temperature range
C _{Tj, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Collector cut-off current}
C _{Emitter cut-off current}
E _{DC current gain}
L _{Collector-emitter saturation voltage}
E _{Base-emitter voltage}
J _{Transition frequency}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Test conditions
Ic= 100µA, IE=0
IC= 1mA , IB=0
IE= 100µA, IC=0
VCB= 40V, IE=0
VCE=20V, IE=0
VEB= 5V, IC=0
VCE=1V, IC=50mA
VCE=1V, IC= 500mA
IC= 500 mA, IB= 50mA
IC= 500 mA, IB= 50mA
VCE=6V, IC=20mA,
f=30MHz
MIN
40
25
5
64
40
150
TYP
MAX
0.1
0.1
0.1
400
0.6
1.2
UNIT
V
V
V
µA
µA
µA
V
V
MHz
WE^{CLASSIFICATION OF hFE(1)}
Rank
D
E
F
G
H
I
J
Range
64-91
78-112
96-135
112-166
144-202
190-300
300-400
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]