S9011 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

RoHS
S9011
S9011 TRANSISTOR (NPN)
D FEATURE
Power dissipation
T _PCM:
0.31 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
0.03 A
Collector-base voltage
O _V(BR)CBO:
30 V
Operating and storage junction temperature range
C _{Tj, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
Symbol
Test conditions
MIN
TYP
MAX UNIT
N _{Collector-base breakdown voltage}
V(BR)CBO
Ic= 100µA, IE=0
30
V
O _{Collector-emitter breakdown voltage}
V(BR)CEO
IC= 0.1mA , IB=0
20
V
R _{Emitter-base breakdown voltage}
V(BR)EBO
IE= 100µA, IC=0
4
V
T Collector cut-off current
ICBO
VCB=16V, IE=0
0.1
µA
Collector cut-off current
ICBO
VCB=16V, IE=0
0.1
µA
C _{Emitter cut-off current}
IEBO
VEB= 3.5V, IC=0
0.1
µA
E _{DC current gain}
hFE(1)
VCE=5V, IC=1mA
28
270
L _{Collector-emitter saturation voltage}
VCE(sat)
IC= 10 mA, IB= 1mA
0.3
V
E _{Base-emitter voltage}
VBE(sat)
IC= 10 mA, IB= 1mA
1
V
J _{Transition frequency}
VCE=5V, IC=1mA,
fT
150
f=30MHz
MHz
WE^{CLASSIFICATION OF hFE(1)}
Rank
D
E
F
G
H
I
J
Range
28-45
39-60
54-80
72-108
97-146
132-198
180-270
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]