S8550 Datasheet, PDF (1/1 Pages) Wing Shing Computer Components – TRANSISTOR (PNP)

RoHS
S8550
S8550 TRANSISTOR (PNP)
D _FEATURE
T _{Power dissipation}
.,L ^PCM:
0.625 W (Tamb=25℃)
Collector current
I_CM:
-0.5 A
O _{Collector-base voltage}
V_(BR)CBO:
-40 V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Collector cut-off current}
E _{Emitter cut-off current}
L _{DC current gain}
E _{Collector-emitter saturation voltage}
J _{Base-emitter saturation voltage}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
Test conditions
Ic= -100µA , IE=0
Ic= -0.1 mA, IB=0
IE= -100µA, IC=0
VCB= -40V, IE=0
VCE= -20V, IB=0
VEB= - 3V, IC=0
VCE= -1V, IC= -50mA
VCE= -1V, IC= -500mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
MIN
-40
-25
-5
85
50
TYP
MAX UNIT
V
V
V
-0.1
µA
-0.1
µA
-0.1
µA
300
-0.6
V
-1.2
V
WE^{Transition frequency}
fT
VCE=- 6 V, IC=-20mA
f =30MHz
150
MHz
CLASSIFICATION OF hFE₍₁₎
Rank
B
C
D
Range
85-160
120-200
160-300
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