S8050 Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – TRANSISTOR (PNP)

RoHS
S8050
S8050 TRANSISTOR (NPN)
D _FEATURES
T _{Power dissipation}
.,L ^PCM:
0.625 W (Tamb=25℃)
Collector current
I_CM:
0.5 A
O _{Collector-base voltage}
V_(BR)CBO:
40 V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA, IE=0
40
O _{Collector-emitter breakdown voltage V(BR)CEO}
Ic= 0.1mA, IB=0
25
R _{Emitter-base breakdown voltage}
V(BR)EBO
IE= 100µA, IC=0
5
T _{Collector cut-off current}
ICBO
VCB= 40V, IE=0
C _{Collector cut-off current}
ICEO
VCE= 20V, IB=0
E _{Emitter cut-off current}
IEBO
VEB= 5V, IC=0
L _{DC current gain}
hFE(1)
hFE(2)
VCE= 1V, IC= 50mA
85
VCE= 1V, IC= 500mA
50
E _{Collector-emitter saturation voltage}
VCE(sat)
IC=500mA, IB=50 mA
J _{Base-emitter saturation voltage}
E_{Transition frequency}
W^{CLASSIFICATION OF hFE(1)}
VBE(sat)
IC=500mA, IB=50 mA
fT
VCE= 6 V, IC=20mA
f =30MHz
150
MAX
0.1
0.1
0.1
300
0.6
1.2
UNIT
V
V
V
µA
µA
µA
V
V
MHz
Rank
B
C
D
Range
85-160
120-200
160-300
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