RB715W Datasheet, PDF (1/1 Pages) Rohm – Schottky barrier diode

RoHS
RB715W
WEJ ^{ELECTRONIC CO.,LTD RB715W SCHOTTKYBARRIERDIODE}
FEATURES:
Power dissipation
P_D:
200 mW (Tamb=25℃)
Collector current
I_F:
30 mA
Collector-base voltage
V_R:
40 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
CIRCUIT:
1.60
1.00
0.20
1.60
0.30
0.50
0.81
SOT-523
1
3
2
MARKING: 3D
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V(BR)
IR
Test conditions
IR= 100µA
VR=10V
MIN
MAX
UNIT
40
V
1
µA
Forward voltage
VF
IF=1mA
0.37
V
Diode capacitance
CD
VR=1V, f=1MHz
2
pF
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