RB715F Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

RoHS
RB715F
WEJ ^{ELECTRONIC CO.,LTD RB715F SCHOTTKY BARRIER DIODE}
FEATURES:
Power dissipation
P_D : 200 mW Tamb=25
Collector current
I_F: 30 mA
Collector-base voltage
V_R : 40
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
CIRCUIT:
Unit mm
1
3
2
MARKING:3D
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
Test conditions
V(BR)
IR
IR= 100 A
VR=10V
VF
IF=1mA
CD
VR=1V f=1MHz
MIN
MAX
UNIT
40
V
1
0.37
V
5
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