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RB425D_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Schottky Diodes
RoHS
RB425D
WEJ ELECTRONIC CO.,LTD RB425D Schottky barrier Diodes
FEATURES
z Small surface mounting type
z Low reverse current and low forward voltage
z High reliability
SOT-23-3L
-
+
+
2. 8 0¡ À0 . 05
1 . 6 0¡ À0. 0 5
Marking: D3L
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
Symbol
VRM
VR
IO
IFSM
Tj
Tstg
Limits
40
40
100
1
125
-40~+125
Unit
V
V
mA
A
℃
℃
Electrical Ratings @TA=25℃
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
VF1
0.55 V
VF2
0.34 V
Conditions
IF=100mA
IF=10mA
Reverse current
IR
30 µA
VR=10V
Capacitance between terminals
CT
6
pF
VR=10V, f=1MHZ
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com