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| PZT4403_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors | |||
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RoHS
PZT4403
PZT4403 TRANSISTOR (PNP)
SOT-223
FEATURES
D Power dissipation
T PCM: 1 W (Tamb=25â)
Collector current
.,L ICM: -0.6 A
Collector-base voltage
V(BR)CBO: -40
V
O Operating and storage junction temperature range
C TJ,Tstg: -55â to +150â
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
IC Parameter
Collector-base breakdown voltage
N Collector-emitter breakdown voltage
Emitter-base breakdown voltage
O Collector cut-off current
Emitter cut-off current
TR DC current gain
LEC Collector-emitter saturation voltage
E Base-emitter saturation voltage
Transition frequency
J Collector capacitance
EEmitter capacitance
Delay time
WRise time
Symbol Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
CC
CE
td
tr
Ic=-100µA,IE=0
Ic=-1mA,IB=0
IE=-100µA,IC=0
VCB=-40V,IE=0
VEB=-5V,IC=0
VCE=-1V,IC=-0.1mA
VCE=-1V,IC=-1mA
VCE=-1V,IC=-10mA
VCE=-1V,IC=-150mA
VCE=-2V,IC=-500mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
VCE=-10V,IC=-20mA,f=100MHz
VCB=-5V,IE=0,f=1MHz
VEB=-0.5V,IC=0,f=1MHz
VCC=-29.5V, IC=-150mA
MIN TYP MAX UNIT
-40
V
-40
V
-6
V
-50
nA
-50
nA
30
60
100
100
300
20
-0.4
V
-0.75 V
-0.95 V
-1.3
V
200
MHz
8.5
pF
35
pF
15
nS
30
nS
Storage time
tS
VBB=3.5V,IB1=- IB2=-15mA
300 nS
Fall time
tf
50
nS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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