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PZT3906_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors
RoHS
PZT3906
PZT3906 TRANSISTOR (PNP)
SOT-223
FEATURES
D Power dissipation
T PCM: 1 W (Tamb=25℃)
Collector current
.,L ICM: -0.2 A
Collector-base voltage
V(BR)CBO: -40
V
O Operating and storage junction temperature range
C TJ, Tstg: -55℃ to +150℃
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
IC Parameter
Collector-base breakdown voltage
N Collector-emitter breakdown voltage
Emitter-base breakdown voltage
O Collector cut-off current
Emitter cut-off current
TR DC current gain
LEC Collector-emitter saturation voltage
E Base-emitter saturation voltage
Transition frequency
J Collector output capacitance
ENoise figure
WDelay Time
Symbol Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
Cob
NF
td
Ic=-10µA,IE=0
Ic=-1mA,IB=0
IE=-10µA,IC=0
VCB=-30V,IE=0
VCE=-30V,IB=0
VCE=-1V,IC=-0.1mA
VCE=-1V,IC=-1mA
VCE=-1V,IC=-10mA
VCE=-1V,IC=-50mA
VCE=-1V,IC=-100mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
VCE=-20V,IC=-10mA,f=100MHz
VCB=-0.5V,IE=0,f=100KHz
VCE=-5V,Ic=-0.1mA,
f=10HZ to15.7KHz,Rg=1KΩ
VCC=-3.0Vdc,VBE=-0.5Vdc
MIN TYP MAX UNIT
-40
V
-40
V
-5
V
-0.05 µA
-0.5 µA
60
80
100
300
60
30
-0.25 V
-0.65
-0.4
V
-0.85 V
-0.95 V
250
MHz
4.5
pF
4
dB
35
nS
Rise Time
tr
IC=-10mAdc,IB1=-1.0mAdc
35
nS
Storage Time
Fall Time
ts
VCC=-3.0Vdc,IC=-10mAdc
tf
IB1=IB2=-1.0mAdc
225
nS
75
nS
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