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| PZT2907A Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP switching transistor | |||
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RoHS
PZT2907A
PZT2907A TRANSISTOR (PNP)
SOT-223
FEATURES
D Power dissipation
T PCM: 1 W (Tamb=25â)
Collector current
.,L ICM: -0.6 A
Collector-base voltage
V(BR)CBO: -60
V
O Operating and storage junction temperature range
C TJ,Tstg: -55â to +150â
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
IC Parameter
Collector-base breakdown voltage
N Collector-emitter breakdown voltage
Emitter-base breakdown voltage
O Collector cut-off current
Emitter cut-off current
TR DC current gain
EC Collector-emitter saturation voltage
L Base-emitter saturation voltage
E Transition frequency
Collector capacitance
J Emitter capacitance
Delay time
ERise time
WStorage time
Symbol Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
Cc
CE
td
tr
tS
Ic=-100µA,IE=0
Ic=-1mA,IB=0
IE=-100µA,IC=0
VCB=-50V,IE=0
VEB=-5V,IC=0
VCE=-10V,IC=-0.1mA
VCE=-10V,IC=-1mA
VCE=-10V,IC=-10mA
VCE=-10V,IC=-150mA
VCE=-10V,IC=-500mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
VCE=-20V,IC=-50mA,f=100MHz
VCB=-10V,IE=0,f=1MHz
VEB=-2V,IC=0,f=1MHz
IC=-150mA IB1=- IB2=- 15mA
MIN TYP MAX UNIT
-60
V
-60
V
-5
V
-10
nA
-50
nA
75
100
100
100
300
50
-0.4
V
-1.6
V
-1.3
V
-2.6
V
200
MHz
8
pF
30
pF
12
nS
30
nS
300 nS
Fall time
tf
65
nS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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