MPSA05 Datasheet, PDF (1/1 Pages) Motorola, Inc – Amplifier Transistors

RoHS
MPSA05/06
MPSA05, 06 TRANSISTOR (NPN)
D _FEATURES
Power dissipation
T _PCM:
Collector current
0.625
W (Tamb=25℃)
.,L ^ICM:
0.5
A
Collector-base voltage
V_(BR)CBO:
MPSA05: 60 V
MPSA06: 80 V
O _{Operating and storage junction temperature range}
C _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMILTTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
IC _Parameter
Collector-base breakdown voltage
N _{Collector-emitter breakdown voltage}
O _{Emitter-base breakdown voltage}
R _{Collector cut-off current}
T _{Collector cut-off current}
C _{Emitter cut-off current}
E DC current gain
Collector-emitter saturation voltage
L _{Base-emitter on voltage}
MPSA05
MPSA06
MPSA05
MPSA06
MPSA05
MPSA06
MPSA05
MPSA06
Symbol Test conditions
V(BR)CBO
Ic=100µA, IE=0
V(BR)CEO
IC= 1mA , IB=0
V(BR)EBO
ICBO
ICEO
IEBO
IE=100µA, IC=0
VCB=60V, IE=0
VCB=80V, IE=0
VCE=50V, IB=0
VCE=60V, IB=0
VEB=3V, IC=0
hFE
VCE=1V, IC= 100mA
VCE(sat)
IC=100 mA, IB=10mA
VBE(on)
IC= 100 mA, VCE=1V
MIN MAX UNIT
60
80
V
60
80
V
4
V
0.1
0.1
µA
0.1
0.1
µA
0.1
µA
100
0.25
V
1.2
V
WEJ ^{E Transition frequency}
VCE= 2 V, IC= 10mA
fT
100
f = 100MHz
MHz
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