MPS2907A Datasheet, PDF (1/1 Pages) Samsung semiconductor – PNP (GENERAL PURPOSE TRANSISTOR)

RoHS
MPS2907A
MPS2907A TRANSISTOR (PNP)
D _FEATURES
TO-92
T _{Power dissipation}
.,L ^PCM ^:
0.625 W (Tamb=25℃)
Collector current
O _ICM:
-0.6 A
Collector-base voltage
C _{V(BR)CBO: -60 V}
Operating and storage junction temperature range
IC ^{TJ, Tstg: -55℃ to +150℃}
1. EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
N _Parameter
O _{Collector-base breakdown voltage}
R _{Collector-emitter breakdown voltage}
T _{Emitter-base breakdown voltage}
Collector cut-off current
C _{Collector cut-off current}
E _{Emitter cut-off current}
L _{DC current gain}
E _{Collector-emitter saturation voltage}
Base-emitter saturation voltage
WEJ ^{Transition frequency}
Symbol
Test conditions
V(BR)CBO
Ic= -10µA, IE=0
V(BR)CEO
IC= -10mA , IB=0
V(BR)EBO
IE= -10µA, IC=0
ICBO
VCB= -50V, IE=0
ICEO
VCE= -35V, IB=0
IEBO
hFE
VCE(sat)
VEB= -3V, IC=0
VCE=-10V, IC= -150mA
IC=- 500mA, IB=-50 mA
VBE(sat)
fT
IC= -500mA, IB=-50 mA
VCE=-20V, IC= -50mA
f = 100MHz
MIN
-60
-60
-5
100
200
TYP MAX UNIT
V
V
V
-0.01
µA
-0.05
µA
-0.01
µA
300
-0.6
V
-1.2
V
MHz
CLASSIFICATION OF h_FE(1)
Rank
L
H
Range
100-200
200-300
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