MPS2907 Datasheet, PDF (1/1 Pages) Motorola, Inc – General Purpose Transistors

RoHS
MPS2907
MPS2907 TRANSISTOR (PNP)
D _FEATURES
TO-92
T _{Power dissipation}
1. EMITTER
.,L ^PCM:
0.625 W (Tamb=25℃)
Collector current
I_CM:
-0.6 A
O _{Collector-base voltage}
V_(BR)CBO:
-60 V
C _{Operating and storage junction temperature range}
2. BASE
3. COLLECTOR
123
T_J, T_stg: -55℃ to +150℃
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
Symbol
Test conditions
MIN
TYP
MAX
N _{Collector-base breakdown voltage}
V(BR)CBO
Ic= -10µA, IE=0
-60
O _{Collector-emitter breakdown voltage V(BR)CEO}
IC= -10 mA , IB=0
-40
R _{Emitter-base breakdown voltage}
V(BR)EBO
IE= -10µA, IC=0
-5
T _{Collector cut-off current}
ICBO
VCB= -50V, IE=0
-0.1
Collector cut-off current
ICEO
VCE= -35V, IB=0
-0.1
C _{Emitter cut-off current}
IEBO
VEB= -3 V, IC=0
-0.1
LE _{DC current gain}
hFE(1)
VCE=-10V, IC= -150mA 100
300
hFE(2)
VCE=-10V, IC= -1mA
60
E _{Collector-emitter saturation voltage}
VCE(sat)
IC=-500 mA, IB=-50 mA
-1
J _{Base-emitter saturation voltage}
VBE(sat)
IC= -500mA, IB=-50 mA
-2
WE^{Transition frequency}
VCE=-20 V, IC= -50mA
fT
200
f = 100MHz
UNIT
V
V
V
µA
µA
µA
V
V
MHz
CLASSIFICATION OF h_FE(1)
Rank
L
H
Range
100-200
200-300
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