MPS2222A Datasheet, PDF (1/1 Pages) Samsung semiconductor – NPN EPITAXIAL SILICON TRANSISTOR(GENERAL PURPOSE TRANSISTOR)

RoHS
MPS2222A
MPS2222A TRANSISTOR (NPN)
FEATURE
Power dissipation
D _PCM:
0.625 W (Tamb=25℃)
T _{Collector current}
.,L ^ICM:
0.6 A
Collector-base voltage
V_(BR)CBO:
75 V
Operating and storage junction temperature range
O _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
C _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
IC ^Parameter
Collector-base breakdown voltage
N _{Collector-emitter breakdown voltage}
O _{Emitter-base breakdown voltage}
Collector cut-off current
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
LE _{Collector-emitter saturation voltage}
E _{Base-emitter saturation voltage}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
Test conditions
Ic= 10µA, IE=0
IC= 10mA , IB=0
IE= 10µA, IC=0
VCB=70V, IE=0
VCE= 35V, IB=0
VEB= 3V, IC=0
VCE=10V, IC= 150mA
VCE=10V, IC= 1mA
IC= 500mA, IB= 50 mA
IC= 500mA, IB= 50 mA
MIN
75
40
6
100
60
TYP MAX UNIT
V
V
V
0.1
µA
0.1
µA
0.1
µA
300
0.6
V
1.2
V
J _{Transition frequency}
fT
VCE= 20V, IC= 20mA
300
f = 100MHz
MHz
WE^{CLASSIFICATION OF hFE(1)}
Rank
L
H
Range
100-200
200-300
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