MPS2222 Datasheet, PDF (1/1 Pages) Motorola, Inc – General Purpose Transistors

RoHS
MPS2222
MPS2222 TRANSISTOR (NPN)
FEATURE
Power dissipation
D _PCM:
0.625 W (Tamb=25℃)
T _{Collector current}
.,L ^ICM:
Collector-base voltage
0.6 A
V_(BR)CBO:
60 V
Operating and storage junction temperature range
O _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
C _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
IC ^Parameter
Collector-base breakdown voltage
N _{Collector-emitter breakdown voltage}
O _{Emitter-base breakdown voltage}
Collector cut-off current
R _{Emitter cut-off current}
CT _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter saturation voltage}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
Test conditions
Ic= 10µA, IE=0
IC= 10mA , IB=0
IE= 10µA, IC=0
VCB= 50V, IE=0
VEB= 3V, IC=0
VCE=10V, IC= 150mA
VCE=10V, IC= 1mA
IC= 500mA, IB= 50 mA
IC= 500mA, IB= 50 mA
MIN
60
30
5
100
60
TYP
MAX
0.1
0.1
300
1
2
UNIT
V
V
V
µA
µA
V
V
E _{Transition frequency}
fT
VCE= 20V, IC= 20mA
f = 100MHz
300
MHz
EJ _{CLASSIFICATION OF hFE(1)}
W^Rank
L
H
Range
100-200
200-300
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