MMSTA42 Datasheet, PDF (1/1 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

RoHS
MMSTA42
MMSTA42 TRANSISTOR (NPN)
D _FEATURES
T _{Power dissipation}
.,L ^PCM:
0.2 W (Tamb=25℃)
Collector current
I_CM:
0.3 A
O _{Collector-base voltage}
V_(BR)CBO: 310
V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
Unit: mm
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Emitter cut-off current}
LE _{DC current gain}
E _{Collector-emitter saturation voltage}
J _{Base-emitter saturation voltage}
V(BR)CBO
Ic= 100µA, IE=0
310
V(BR)CEO
Ic= 1 mA, IB=0
305
V(BR)EBO
IE= 100µA, IC=0
5
ICBO
VCB=200V, IE=0
IEBO
VEB= 5V, IC=0
HFE(1)
VCE= 10V, IC= 1mA
60
HFE(2)
VCE= 10V, IC=10mA
100
HFE(3)
VCE=10V, IC=30mA
75
VCE(sat)
IC=20 mA, IB= 2mA
VBE(sat)
IC= 20 mA, IB=2mA
MAX UNIT
V
V
V
0.25 µA
0.1
µA
200
0.2
V
0.9
V
WE^{Transition frequency}
fT
VCE= 20V, IC= 10mA
50
f=30MHz
MHz
DEVICE MARKING
MMSTA42=K3M
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]