MMST5551_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

RoHS
MMST5551
MMST5551 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
0.2 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
0.2 A
Collector-base voltage
O _V(BR)CBO:
160 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
Collector-emitter breakdown voltage
O _{Emitter-base breakdown voltage}
R _{Collector cut-off current}
T Emitter cut-off current
C _{DC current gain}
LE _{Collector-emitter saturation voltage}
E _{Base-emitter voltage}
J _{Transition frequency}
E_{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=10µA, IC=0
VCB=120V, IE=0
VEB=3V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=-10mA
VCE=5V, IC=50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
MIN
180
160
5
80
80
30
100
WNoise figure
NF
VCE=5V, Ic=0.2mA,
TYP MAX UNIT
V
V
V
50 nA
50 nA
250
0.15 V
0.2 V
1
V
1
V
300 MHz
6
pF
8
dB
f=1KHZ, Rg=10Ω
Marking
K4N
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]