MMST5401 Datasheet, PDF (1/1 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

RoHS
MMST5401
MMST5401 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
0.2 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-0.2 A
Collector-base voltage
O _V(BR)CBO:
-160 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
Collector-emitter breakdown voltage
O _{Emitter-base breakdown voltage}
R _{Collector cut-off current}
Emitter cut-off current
CT _{DC current gain}
LE _{Collector-emitter saturation voltage}
E _{Base-emitter voltage}
J _{Transition frequency}
E_{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=-100µA, IE=0
Ic=-1mA, IB=0
IE=-10µA, IC=0
VCB=-120V, IE=0
VEB=-3V, IC=0
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
MIN
-160
-150
-5
50
60
50
100
TYP
MAX
-50
-50
UNIT
V
V
V
nA
nA
240
-0.2 V
-0.5 V
-1
V
-1
V
300 MHz
6
pF
WNoise figure
NF
VCE=-5V, Ic=-0.2mA,
8
dB
f=1KHZ, Rg=10Ω
Marking
K4M
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]